MTE712P & MTE712P-I PCIe M.2 SSD
PCIe M.2 SSD, Power Loss Protection (PLP), built-in tantalum capacitor and DRAM cache
Key Features:
- Compliant with RoHS 2.0 standards
- Compliant with NVM Express specification 1.4
- Compliant with PCI Express specification 4.0
- Space-saving M.2 form factor (80mm) – ideal for mobile computing devices
- PCIe Gen 4 x4 interface
- DDR4 DRAM Cache embedded
- High-quality 3D NAND flash
- Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
- Key components fortified by default with Corner Bond technology
- 30µ" PCB gold finger
- Anti-sulfur technology implemented to prevent sulfurization in the environment
- Power Loss Protection (PLP) to prevent data loss in the event of a sudden power outage
- Extended Temp. (-20°C ~ 75°C) and Wide Temp. (-40°C ~ 85°C) options available
Introducing Transcend's M.2 SSD MTE712P, equipped with Power Loss Protection (PLP) to safeguard data integrity during unexpected power outages. The built-in tantalum capacitor provides power to the controller and DRAM cache, ensuring storage reliability.
MTE712P also complies with TCG Opal 2.0 standards, employing AES 256-bit hardware-based encryption and LBA sector-specific permissions for data protection.
Featuring 112-layer 3D NAND flash and a PCIe Gen 4 x4 interface, MTE712P achieves unparalleled transfer speeds. Its built-in DRAM cache enables fast random read and write speeds while enhancing drive endurance. The PCB with 30µ" gold finger, Corner Bond technology, and anti-sulfur resistors guarantee reliability in harsh conditions.
Furthermore, MTE712P undergoes 100% in-house chamber testing for extended operating temperatures (-20℃ to 75℃). For mission-critical applications, Transcend offers the MTE712P-I with wide temperature capabilities (-40℃ to 85℃) to ensure sustained functionality, enhanced endurance, and optimal reliability.
Firmware Features
- Supports NVM command
- Dynamic thermal throttling
- Built-in LDPC ECC (Error Correction Code) functionality
- Advanced Global Wear-Leveling and Block management for reliability
- Advanced Garbage Collection
- Supports S.M.A.R.T. function to conduct health monitoring, analysis, and reporting for storage devices
- TRIM command for better performance
- NCQ command for better performance
- Full drive encryption with Advanced Encryption Standard (AES)
- Compliant with TCG Opal specifications and IEEE 1667 standards
Hardware Features
- Compliant with RoHS 2.0 standards
- Compliant with NVM Express specification 1.4
- Compliant with PCI Express specification 4.0
- Space-saving M.2 form factor (80mm) – ideal for mobile computing devices
- PCIe Gen 4 x4 interface
- DDR4 DRAM Cache embedded
- High-quality 3D NAND flash
- Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
- Key components fortified by default with Corner Bond technology
- 30µ" PCB gold finger
- Anti-sulfur technology implemented to prevent sulfurization in the environment
- Power Loss Protection (PLP) to prevent data loss in the event of a sudden power outage
- Extended Temp. (-20°C ~ 75°C) and Wide Temp. (-40°C ~ 85°C) options available
Appearance |
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| Dimensions | 80 mm x 22 mm x 3.88 mm (3.15" x 0.87" x 0.15") |
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| Weight | 9 g (0.32 oz) |
| M.2 Type |
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| Form Factor |
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Interface |
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| Bus Interface |
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Storage |
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| Capacity |
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| Flash Type |
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Operating Environment |
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| Operating Voltage |
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| Operating Temperature |
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| Storage Temperature | -55°C (-67°F) ~ 85°C (185°F) |
| Humidity | 5% ~ 95% |
| Shock |
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| Vibration (Operating) | 20 G (peak-to-peak), 7 Hz ~ 2000 Hz (frequency) |
Power |
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| Power Consumption (Operation) | 4 watt(s) |
| Power Consumption (IDLE) | 1.35 watt(s) |
Performance |
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| Sequential Read/Write (CrystalDiskMark) | Read: up to 3,800 MB/s Write: up to 3,100 MB/s |
| 4K Random Read/Write (IOmeter) | Read: up to 350,000 IOPS Write: up to 340,000 IOPS |
| Mean Time Between Failures (MTBF) | 3,000,000 hour(s) |
| Terabytes Written (TBW) | up to 4,320 TBW |
| Drive Writes Per Day (DWPD) | 1.97 (3 yrs) |
| Note |
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